ds30945 rev. 6 - 2 1 of 5 www.diodes.com ddtc114elp ? diodes incorporated ddtc114elp pre-biased (r1 = r2) small signal surface mount 100ma npn transistor features new product ? epitaxial planar die construction ? ultra-small leadless surface mount package ? ideally suited for automated assembly processes ? lead free by design/rohs compliant (note 1) ? "green" dev ice (note 2) ? qualified to a ec-q101 standards for high reliability mechanical data ? case: dfn1006-3 ? case material: molded plastic, "green" molding compound. ul f lammability classification rating 94v-0 ? moisture sensitivity : level 1 per j-std-020d ? terminal connections: collector dot (see diagram and marking information) ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? marking code n5, dot denotes collector side ? ordering information: see page 4 ? weight: 0.0009 grams (approximate) 3 1 2 c 1 2 3 e b r 1 r 2 bottom view top view dfn1006-3 in c 3 e 2 1 r 2 r 1 b gnd out in b 1 2 3 c e gnd out equivalent inverter circuit schematic and pin configuration component p/n r1(nom) r2(nom) ddtc114elp 10k 10k maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit supply voltage v cc 50 v input voltage v in -10 to +40 v output current i o 50 ma collector current i c(max) 100 ma thermal characteristics characteristic symbol value unit power dissipation (note 3) @t a = 25c p d 250 mw power derating above 25c p der 2 mw/c thermal resistance, junction to ambient air (note 3) @t a = 25c (equivalent to one heated junction of npn) r ja 500 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be found on our w ebsite at http:// www.di odes.com/products/l ead_free/index.php. 3. device mounted on fr-4 pcb, 1? x 0.85? x 0.062?; pad layout as shown on page 5 or diodes inc. suggested pad layout document ap02001, which can be found on our website at http:// www.di odes.com/datas heets/ap02001.pdf.
ds30945 rev. 4 - 2 2 of 5 www.diodes.com ddtc114elp ? diodes incorporated new product electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 4) collector-base breakdown voltage v (br)cbo 50 ? ? v i c = 10 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 50 ? ? v i c = 1.0ma, i b = 0 emitter-base breakdown voltage* v (br)ebo 5 ? ? v i e = 50 a, i c = 0 collector cutoff current* i cex ? ? 0.5 a v ce = 50v, v eb(off) = 3.0v base cutoff current (i bex ) i bl ? ? 0.5 a v ce = 50v, v eb(off) = 3.0v collector-base cut off current i cbo ? ? 0.5 a v cb = 50v, i e = 0 collector-emitter cut off current, i o(off) i ceo ? ? 1 a v cb = 50v, i b = 0 emitter-base cut off current i ebo ? ? 0.4 ma v eb = 4v, i c = 0 input off voltage v i(off) ? 1.16 0.5 v v cc = 5v, i o = 100ua on characteristics (note 4) 10 ? ? ? v ce = 5v, i c = 1ma 15 ? ? ? v ce = 5v, i c = 2ma 60 ? ? ? v ce = 5v, i c = 10ma 100 ? ? ? v ce = 5v, i c = 50ma dc current gain h fe 90 ? ? ? v ce = 5v, i c = 70ma ? ? 0.15 v i c = 10ma, i b = 1ma ? ? 0.2 v i c = 50ma, i b = 5ma ? ? 0.25 v i c = 50ma, i b = 2.5ma ? ? 0.25 v i c = 50ma, i b = 10ma collector-emitter saturation voltage v ce(sat) ? ? 0.3 v i c = 70ma, i b = 10ma ? ? 0.85 v v ce = 5v, i c = 2ma base-emitter turn-on voltage* v be(on) ? ? 0.95 v v ce = 5v, i c = 10ma ? ? 0.98 v i c = 10ma, i b = 1ma, v ce = 5v base-emitter saturation voltage* v be(sat) ? ? 1.2 v i c = 50ma, i b = 5ma, v ce = 5v input-on voltage v i(on) 2.5 1.6 ? v v o = 0.3v, i o = 50ma input current i i ? ? 0.88 ma v i = 5v output on voltage (same as v ce(sat) ) v o(on) ? ? 0.3 v i i = 2.5ma, i o = 50ma input resistance r1 7 10 13 k ? resistance ratio (r2/r1) 0.8 1 1.2 ? ? small signal characteristics current gain-bandwidth product f t ? 250 ? mhz v ce = 10v, i e = 5ma, f = 1mhz * guaranteed by design. note: 4. short duration pulse test used to minimize self-heating effect. pulse t est: pulse width tp < 300 us, duty cycle, d < =2%.
0 50 100 150 200 250 300 0 25 50 75 100 125 150 175 t , ambient temperature ( c) fig. 1 power derating curve a p , p o we r dissi p a t i o n (mw) d r = 500 c/w ja 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 01 2 34 56 78 910 v , collector emitter voltage (v) ce i, c o lle c t o r c u r r e n t (a) c fig. 2 i v cce vs . typical i = 1.0ma b i = 0.8ma b i = 0.7ma b i = 0.6ma b i = 0.9ma b i = 0.5ma b i = 0.4ma b i = 0.3ma b i = 0.2ma b i = 0.1ma b 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -60 -30 0 30 60 90 120 150 v = 0.3v o i = 5ma o t , ambient temperature ( c) fig. 3 typical input voltage vs. t a a v, i n p u t v o l t a g e (v) i(on) 0 50 100 150 200 250 0.1 1 10 100 1,000 v = 5v ce h, d c c u r r en t g ain fe i , collector current (ma) fig. 4 typical dc current gain c t = 150 c a t = 85 c a t = -55 c a t = 25 c a 0.01 0.1 1 10 0.1 1 10 100 i/i = 10 cb v , collector-emitter saturation voltage (v) ce(sat) i , collector current (ma) fig. 5 typical v vs. i c ce(sat) c t = 150 c a t = 85 c a t = -55 c a t = 25 c a 0 1.5 3 4.5 6 7.5 9 10.5 12 13.5 15 0.1 1 10 100 v , base-emi t t e r v o l t a g e (v) be i , collector current (ma) fig. 6 typical v vs. i c be c v = 5v ce new product ds30945 rev. 4 - 2 3 of 5 www. diodes.com ddtc114elp ? diodes incorporated
0 3 6 9 12 15 18 21 24 27 30 0.1 1 10 100 i/i = 10 cb v , base-emitter saturation voltage (v) be(sat) i , collector current (ma) fig. 7 typical v vs. i c be(sat) c new product ordering information (note 6) device packaging shipping ddtc114elp-7 dfn1006-3 3000/tape & reel notes: 6. for packaging details, please s ee page 5 or go to our website at http:// www.di odes.com/ap2007.pdf. marking information n5 n5 = product type marking code dot denotes collector, pin 3 package outline dimensions dfn1006-3 dim min max typ a 0.95 1.075 1.00 b 0.55 0.675 0.60 c 0.45 0.55 0.50 d 0.20 0.30 0.25 g 0.47 0.53 0.50 h 0 0.05 0.03 k 0.10 0.20 0.15 l 0.20 0.30 0.25 m ? ? 0.35 n ? ? 0.40 all dimensions in mm d h b c ln a m k g ds30945 rev. 4 - 2 4 of 5 www. diodes.com ddtc114elp ? diodes incorporated
suggested pad layout new product y c g1 g2 x x 1 z dimensions value (in mm) z 1.1 g1 0.3 g2 0.2 x 0.7 x1 0.25 y 0.4 c 0.7 important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the ri ghts of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products are represented on our website, harmless against all damages. life support diodes incorporated products are not authoriz ed for use as critical components in life support devices or systems without the e xpressed written approval of the president of diodes incorporated. ds30945 rev. 4 - 2 5 of 5 www.diodes.com ddtc114elp ? diodes incorporated
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